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| CR5AS-12 Thyristor Medium Power Use REJ03G0345-0200 Rev.2.00 Mar.01.2005 Features * IT (AV) : 5 A * VDRM : 600 V * IGT : 100 A * Non-Insulated Type * Glass Passivation Type Outline PRSS0004ZA-A (Package name: MP-3A) 4 2, 4 3 12 1 3 1. 2. 3. 4. Cathode Anode Gate Anode Applications Switching mode power supply, regulator for autocycle, protective circuit for TV sets, VCRs, and printers, igniter for autocycle, electric tool, strobe flasher, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Rev.2.00, Mar.01.2005, page 1 of 7 CR5AS-12 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- Ratings 7.8 5 90 33 0.5 0.1 6 6 0.3 - 40 to +125 - 40 to +125 0.26 Unit A A A A2s W W V V A C C g Conditions Commercial frequency, sine half wave 180 conduction, Tc = 88C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 220 . Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-c) Min. -- -- -- -- 0.1 1 -- -- Typ. -- -- -- -- -- -- 3.5 -- Max. 2.0 2.0 1.8 0.8 -- 100Note3 -- 3.0 Unit mA mA V V V A mA C/W Test conditions Tj = 125C, VRRM applied, RGK = 220 Tj = 125C, VDRM applied, RGK = 220 Tc = 25C, ITM = 15 A, instantaneous value Tj = 25C, VD = 6 V, IT = 0.1 A Tj = 125C, VD = 1/2 VDRM, RGK = 220 Tj = 25C, VD = 6 V, IT = 0.1 A Tj = 25C, VD = 12 V, RGK = 220 Junction to caseNote2 Notes: 2. The measurement point for case temperature is at anode tab. 3. If special value of IGT is required, IGT from 20 to 100 A is possible. (IGT item: E) Rev.2.00, Mar.01.2005, page 2 of 7 CR5AS-12 Performance Curves Maximum On-State Characteristics 102 7 Tc = 25C 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100 Rated Surge On-State Current Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 60Hz) x 100 (%) Gate Characteristics 102 7 5 3 2 Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 V = 6V 2D RL = 60 100 -60 -40 -20 0 20 40 60 80 100 120 140 #1 Gate Voltage (V) 101 7 5 3 2 VFGM = 6V PGM = 0.5W PG(AV) = 0.1W VGT = 0.8V IGT = 100A IFGM = 0.3A (Tj = 25C) 100 7 5 3 2 -1 7 VGD = 0.1V 5 -2 10 23 5710-1 23 57 100 23 57 10123 57102 23 Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C) #2 Typical Example IGT(25C) #1 11A #2 61A Gate Current (mA) Junction Temperature (C) Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) Gate Trigger Voltage vs. Junction Temperature 1.0 Tj = 25C Gate Trigger Voltage (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -60 -40 -20 0 20 40 60 80 100 120 140 Distribution Typical Example Transient Thermal Impedance (C/W) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 Junction to ambient 102 7 5 3 2 101 7 5 3 2 Junction to case 100 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 Junction Temperature (C) Time (s) Rev.2.00, Mar.01.2005, page 3 of 7 CR5AS-12 Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 140 Maximum Average Power Dissipation (Single-Phase Half Wave) 16 Average Power Dissipation (W) 180 14 12 10 8 6 4 2 0 0 1 2 3 4 Case Temperature (C) 90 120 60 360 Resistive, inductive loads 120 100 80 60 40 20 = 30 60 90 120 4 5 = 30 360 Resistive, inductive loads 5 6 7 8 180 0 0 1 2 3 6 7 8 Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 160 Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Ambient Temperature (C) Ambient Temperature (C) 140 120 100 80 60 360 Resistive, inductive loads Natural convection 140 120 100 80 60 360 Resistive, inductive loads Natural convection = 30 40 60 90 120 20 180 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 = 30 60 90 20 120 180 0 0 2 1 40 Aluminum Board 80x80xt2.3 3 4 5 6 7 8 Average On-State Current (A) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 Maximum Average Power Dissipation (Single-Phase Full Wave) 16 Average Power Dissipation (W) Resistive loads 14 12 180 90 = 30 60 120 Case Temperature (C) 140 120 100 80 60 40 20 360 360 10 Resistive loads 8 6 4 2 0 0 1 2 = 30 60 90 120 180 3 4 5 6 7 8 0 0 1 2 3 4 5 6 7 8 Average On-State Current (A) Average On-State Current (A) Rev.2.00, Mar.01.2005, page 4 of 7 CR5AS-12 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 160 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Aluminum Board 80x80xt2.3 Ambient Temperature (C) Ambient Temperature (C) 140 120 100 80 60 = 30 60 40 90 120 20 180 0 0 140 120 100 80 60 40 20 0 0 360 Resistive loads Natural convection 360 Resistive loads Natural convection = 30 60 90 120 180 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 2 3 4 5 6 7 8 Average On-State Current (A) Average On-State Current (A) Breakover Voltage (RGK = rk) Breakover Voltage (RGK = 220) x 100 (%) x 100 (%) Breakover Voltage vs. Junction Temperature 160 Breakover Voltage vs. Gate to Cathode Resistance 103 7 Typical Example 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10-2 2 3 5 710-1 2 3 5 7100 2 3 5 7 101 Typical Example 140 120 100 80 60 40 20 RGK = 220 Tj = 125C Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C) 0 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Gate to Cathode Resistance (k) x 100 (%) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Holding Current vs. Junction Temperature 102 7 5 4 3 2 7 5 4 3 2 Typical Example Tj = 125C RGK = 220 Breakover Voltage (dv/dt = vV/s) Breakover Voltage (dv/dt = 1V/s) Holding Current (mA) Distribution Typical Example 101 100 RGK = 220 10-1 -60 -40 -20 0 20 40 60 80 100 120 140 7 5 4 3 VD = 12V 2 Rate of Rise of Off-State Voltage (V/s) Junction Temperature (C) Rev.2.00, Mar.01.2005, page 5 of 7 CR5AS-12 x 100 (%) 400 x 100 (%) Holding Current vs. Gate to Cathode Resistance Typical Example IGT(25C) IH(220) 350 14A 1.7mA #1 48A 2.7mA 300 # 2 250 200 150 100 50 0 -2 10 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 #1 #2 Repetitive Peak Reverse Voltage (Tj = tC) Repetitive Peak Reverse Voltage (Tj = 25C) Tj = 25C Typical Example Holding Current (RGK = rk) Holding Current (RGK = 1k) Gate to Cathode Resistance (k) Junction Temperature (C) Gate Trigger Current vs. Gate Current Pulse Width x 100 (%) 104 7 5 3 2 103 7 5 3 2 #1 #2 Gate Trigger Current (tw) Gate Trigger Current (DC) Typical Example IGT(DC) #1 11A #2 61A 102 7 5 V = 6V 3D 2 RL = 60 Ta = 25C 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) Rev.2.00, Mar.01.2005, page 6 of 7 CR5AS-12 Package Dimensions JEITA Package Code SC-63 RENESAS Code PRSS0004ZA-A Package Name MP-3A MASS[Typ.] 0.32g Unit: mm 1 0.2 6.6 5.3 0.2 2.3 0.5 0.2 6.1 0.2 10.4Max 0.1 0.1 1Max 2.5Min 0.76 0.2 0.76 0.5 0.2 2.3 0.2 2.3 Order Code Lead form Standard packing Quantity Standard order code Standard order code example CR5AS-12-T13 CR5AS-12 Surface-mounted type Taping 3000 Type name - T +Direction (1 or 2) +3 Surface-mounted type Tube 75 Type name Note : Please confirm the specification about the shipping in detail. Rev.2.00, Mar.01.2005, page 7 of 7 1 1.4 0.2 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. 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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0 |
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